Fluorine-doped tin oxide (FTO) thin films were prepared by a radio frequency magnetron sputtering technique. The defects and charge carrier transport behavior in FTO thin films were evaluated during the transition process from amorphous to nanocrystalline structures. The stable lattice structure in FTO thin films was obtained as the annealing temperature reached 400 ${}^{°}$C. Positron annihilation results indicated that defect evolution in the FTO thin films was shown in two stages, formation and reduction of vacancies/vacancy clusters. The carrier mobility of the FTO thin films annealed at 600 ${}^{°}$C was enhanced twice the amount than that of the unannealed samples. The correlation between the results obtained from positron annihilation and the Hall effect revealed the importance of defect scattering in deciding the charge carrier mobility. A defect scattering mechanism was proposed to interpret the noticeable increment of carrier mobility in FTO thin films after thermal treatment.

中文翻译：

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热处理后掺氟氧化锡薄膜缺陷的演变和载流子传输机制

采用射频磁控溅射技术制备了掺氟氧化锡（FTO）薄膜。在从非晶结构到纳米晶结构的过渡过程中，评估了 FTO 薄膜中的缺陷和电荷载流子传输行为。当退火温度达到 400 ℃时，FTO 薄膜中获得稳定的晶格结构 ${}^{°}$C. 正电子湮灭结果表明 FTO 薄膜中的缺陷演变分为两个阶段，空位/空位簇的形成和减少。600 ℃退火 FTO 薄膜的载流子迁移率 ${}^{°}$C 的增强量是未退火样品的两倍。从正电子湮灭获得的结果与霍尔效应之间的相关性揭示了缺陷散射在决定电荷载流子迁移率方面的重要性。提出了一种缺陷散射机制来解释热处理后 FTO 薄膜中载流子迁移率的显着增加。