Presently, the applications of optoelectronics products have assisted the fields of telecommunication in providing value-added products. In this sense, pure Tungsten disulphide (WS₂) and Copper doped WS₂ thin films are coated via the JNSP technique with different doping levels such as 1, 3, and 5 wt% of Cu, and the optimized substrate temperature of 450 °C. The morphology, structural, particle size, optical, and electrical properties of coated pristine and Cu-WS₂ thin films were characterized by scanning electron microscopy (SEM), energy dispersive microscopy (EDS), X-ray diffraction (XRD), UV spectra, Photoluminescence spectroscopic (PL) and Hall Effect measurements. The XRD results exhibit the prepared films have polycrystalline in nature with a tetragonal phase and the calculated crystallite size varied between 16 and 74 nm. The SEM images show the uniform grain size. The optical bandgap of 2.42 eV was obtained in the 5 wt% of Cu doped films. Hall measurements depicted that the pristine and Cu-doped WS₂ films have n-type behaviour with carrier concentration is about 10⁸ cm⁻³. Moreover, the fabricated p-Si/n-CuWS₂ diode parameters like ideality factor (n), barrier height (Φ_B), and reverse saturation current (I_o) values are measured.

目前，光电产品的应用已经辅助电信领域提供增值产品。在这个意义上，纯二硫化钨（WS ₂）和铜掺杂的WS _2个薄膜通过具有不同的掺杂水平，例如1,3，和Cu的5％（重量）的JNSP技术，和450℃的优化衬底温度涂覆. 涂层原始和 Cu-WS ₂的形态、结构、粒径、光学和电学性能通过扫描电子显微镜 (SEM)、能量色散显微镜 (EDS)、X 射线衍射 (XRD)、紫外光谱、光致发光光谱 (PL) 和霍尔效应测量对薄膜进行表征。XRD 结果表明制备的薄膜具有四方相的多晶性质，计算出的微晶尺寸在 16 和 74 nm 之间变化。SEM图像显示均匀的晶粒尺寸。在 5 wt% 的 Cu 掺杂薄膜中获得 2.42 eV 的光学带隙。霍尔测量表明原始和掺杂铜的 WS ₂膜具有 n 型行为，载流子浓度约为 10 ⁸  cm ^-3。此外，制造的 p-Si/n-CuWS ₂二极管参数如理想因子 (n)、势垒高度 (Φ _B)，并测量反向饱和电流 (I _o ) 值。