Single-crystalline Zn nanowires were synthesized by physical vapor deposition at a low growth temperature of 100 °C. The morphology changes from wool-like to unidirectional nanowires with decreasing Zn concentration in the carrier gas. A growth model is proposed to explain the unidirectional growth of the nanowires along the [112̅0] direction. The electrical transport properties of Zn nanowires were investigated by measurements of the resistivity and breakdown current density of individual nanowires. The nanowires have a low resistivity of (11.9 ± 3.4) μΩ·cm and can withstand a remarkably high current density of (2.3 ± 0.6) × 10⁷ A·cm^–2.

中文翻译：

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单晶锌纳米线的低温物理气相沉积和电学表征

通过物理气相沉积在 100 °C 的低生长温度下合成了单晶 Zn 纳米线。随着载气中Zn浓度的降低，形态从羊毛状变为单向纳米线。提出了一种生长模型来解释纳米线沿 [112̅0] 方向的单向生长。通过测量单个纳米线的电阻率和击穿电流密度来研究 Zn 纳米线的电传输特性。纳米线具有 (11.9 ± 3.4) μΩ·cm 的低电阻率，并且可以承受 (2.3 ± 0.6) × 10 ⁷ A·cm ^–2的非常高的电流密度。