For the tandem organic light emitting diodes (TOLEDs) with the charge generation unit (CGU) of LiF/Al/MoO₃, there is a significant current lateral spreading causing light emission over an extremely large area outside the OLEDs pixel, due to the conductive interfacial layer caused by the oxidation-reduction reaction between Al and MoO₃ layers. To crack this nut, a buffer layer of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) is inserted between Al and MoO₃ layers. The result shows the HAT-CN buffer layer eliminates the spread light emission in the TOLEDs. What's more, the device characteristics show the new CGU of LiF/Al/HAT-CN/MoO₃ has stronger charge generation and injection capabilities. The white TOLEDs with the new CGU exhibit a high external quantum efficiency (EQE) of 28.4%. Compared with the single OLEDs and the TOLEDs with the CGU of LiF/Al/MoO₃, the efficiency is increased by 143% and 44%, respectively.

对于具有 LiF/Al/MoO ₃电荷生成单元 (CGU) 的串联有机发光二极管 (TOLED) ，由于导电由 Al 和 MoO ₃层之间的氧化还原反应引起的界面层。为了破解这个难题，在 Al 和 MoO ₃层之间插入了 1,4,5,8,9,11-六氮杂苯-六甲腈 (HAT-CN) 的缓冲层。结果表明 HAT-CN 缓冲层消除了 TOLED 中的扩散光发射。更重要的是，器件特性显示了LiF/Al/HAT-CN/MoO ₃的新型CGU具有更强的电荷产生和注入能力。具有新型 CGU 的白色 TOLED 具有 28.4% 的高外量子效率 (EQE)。与单个OLED和具有LiF/Al/MoO ₃的CGU的TOLED相比，效率分别提高了143%和44%。