Integrated polarization-sensitive photodetectors fabricated by geometric anisotropic 2D materials have become attractive in recent years. In this work, the successful construction of self-driven and polarization-sensitive photodetectors based on GaTe/MoS₂ p–n van der Waals (vdW) heterojunction is demonstrated by mechanical exfoliation and dry transfer methods. The fabricated GaTe/MoS₂ vdW heterojunctions show ambipolar behavior, and the highest rectification ratio can reach 93.4. The highest responsivity under 532 nm illumination reaches 145 mA W⁻¹ and the response time is less than 10 ms. Moreover, the photocurrent polarization of the fabricated GaTe/MoS₂ photodetectors manifests in fourfold anisotropy with a high polarization ratio of 2.9, which can be ascribed to the highly anisotropic monoclinic structure of layered m-GaTe. This finding thus offers more information and creates new opportunities about how to fabricate integrated polarization-sensitive photodetectors.

中文翻译：

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基于GaTe/MoS2范德华异质结的四重偏振敏感光电探测器

近年来，由几何各向异性二维材料制造的集成偏振敏感光电探测器变得很有吸引力。在这项工作中，通过机械剥离和干转移方法证明了基于 GaTe/MoS ₂ p-n 范德华 (vdW) 异质结的自驱动和偏振敏感光电探测器的成功构建。制备的GaTe/MoS ₂ vdW异质结表现出双极性，最高整流比可达93.4。 532 nm 光照下的最高响应度达到 145 mA W ^-1，响应时间小于 10 ms。此外，制造的 GaTe/MoS ₂的光电流极化光电探测器表现出四倍的各向异性，具有 2.9 的高偏振比，这可归因于层状 m-GaTe 的高度各向异性单斜结构。因此，这一发现提供了更多信息，并为如何制造集成的偏振敏感光电探测器创造了新的机会。