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Use of passive, quantitative EBIC to characterize device turn-on in 7 nm technology
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2021-09-25 , DOI: 10.1016/j.microrel.2021.114380
Gregory M. Johnson 1 , Andreas Rummel 2
Affiliation  

A novel analysis routine is proposed that visualizes the opening of a transistor channel using Electron Beam Induced Current (EBIC) with a net zero-volt bias across a channel. nFET devices on a 7 nm technology node chip were examined in two different regions of the sample. With varying gate voltage, the device turn-on was clearly evident in the resulting EBIC image. Quantitative analysis of the resulting currents is demonstrated, and shows the channel opening up at voltages earlier than shown by I-V measurement. A mechanism for this difference is proposed. The analysis, also involving a 2-dimensional map of the space, provides opportunities for detecting regional variations in the electrical properties or performance at the high resolutions afforded with a scanning electron microscope (SEM).



中文翻译:

使用无源、定量 EBIC 来表征 7 nm 技术中的器件开启

提出了一种新颖的分析程序,该程序使用电子束感应电流 (EBIC) 和跨通道的净零伏偏置来可视化晶体管通道的打开。在样品的两个不同区域检查了 7 nm 技术节点芯片上的 nFET 器件。随着栅极电压的变化,器件开启在得到的 EBIC 图像中清晰可见。演示了对所得电流的定量分析,并显示了通道在电压下打开的时间比 IV 测量显示的要早。提出了这种差异的机制。该分析还涉及空间的二维地图,为以扫描电子显微镜 (SEM) 提供的高分辨率检测电特性或性能的区域变化提供了机会。

更新日期:2021-09-27
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