In this work, we report on a self-powered ultraviolet photodiode realized using lateral polarity structure (LPS) GaN films. The opposite nature of the polarization charge yields different barrier heights at the standard Ni/Au Schottky contact interface of N-polar and III-polar GaN films. As a result, a natural nonzero built-in potential is obtained in the LPS GaN photodiode, which showed photoresponsivity even at 0 V applied bias. The self-powered mechanism inside such an LPS GaN photodiode is discussed in detail by a combination of simulation prediction and experimental validation. Furthermore, a variation in the doping concentration of the adjacent III- and N-polar GaN domain is shown to improve the photoresponsivity compared to the conventional III-polar photodiode. Thus, this work validates that the LPS GaN photodiode is a promising candidate to realize self-powered operation and a general design rule for the photodiode with in-plane built-in potential.

中文翻译：

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基于横向极性结构GaN薄膜的自供电紫外光电二极管

在这项工作中，我们报告了使用横向极性结构 (LPS) GaN 薄膜实现的自供电紫外光电二极管。极化电荷的相反性质在 N 极性和 III 极性 GaN 薄膜的标准 Ni/Au 肖特基接触界面处产生不同的势垒高度。结果，在 LPS GaN 光电二极管中获得了自然的非零内建电位，即使在施加 0 V 偏压下也表现出光响应性。通过结合模拟预测和实验验证，详细讨论了这种 LPS GaN 光电二极管内部的自供电机制。此外，与传统的 III 极光电二极管相比，相邻的 III 极和 N 极 GaN 域的掺杂浓度的变化显示出提高了光响应性。因此，