Lateral field emission devices have been characterized and degradation tested for >1000 h to study stability and reliability. Two types of planar device structures, diode and bowtie, were studied. These nanoscale devices have 10–20 nm tip to tip or tip to collector dimensions with the tips fabricated from Au/Ti. Typical currents of 2–6 nA at 6 V were measured. The devices were placed on lifetime tests in a vacuum of <10⁻⁸ Torr and biased at 6 V DC for >1000 h. Seven total devices were tested with one failing at 300 h. and three of the devices showed <5% degradation in current until 1400 h when testing was stopped, and three other devices showed a sudden drop of ≈20% ranging from 700 to 900 h. Optical microscope images of one of the devices that failed catastrophically at 350 h show physical arc damage where the bond pad narrows to the emitter trace. Scanning electron microscope images of a bowtie part that completed 1400 h of operation showed no obvious erosion or damage to the tips.

中文翻译：

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平面场发射器件的长期场发射电流稳定性表征

横向场发射装置已被表征和退化测试超过 1000 小时，以研究稳定性和可靠性。研究了两种类型的平面器件结构，二极管和领结。这些纳米级器件具有 10-20 nm 的尖端到尖端或尖端到收集器的尺寸，尖端由 Au/Ti 制成。测量了 6 V 时 2–6 nA 的典型电流。在<10 ^-8的真空中对器件进行寿命测试Torr 并在 6 V DC 下偏置 >1000 小时。总共测试了七台设备，其中一台在 300 小时后失效。并且其中三个设备在测试停止前 1400 小时显示电流下降 <5%，其他三个设备在 700 到 900 小时范围内突然下降约 20%。其中一个在 350 小时时发生灾难性故障的器件的光学显微镜图像显示了物理电弧损坏，其中焊盘变窄到发射极迹线。完成 1400 小时操作的领结零件的扫描电子显微镜图像显示尖端没有明显的侵蚀或损坏。