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GaAs quantum dots grown by droplet etching epitaxy as quantum light sources
Applied Physics Letters ( IF 4 ) Pub Date : 2021-09-24 , DOI: 10.1063/5.0057070
Saimon Filipe Covre da Silva 1 , Gabriel Undeutsch 1 , Barbara Lehner 1 , Santanu Manna 1 , Tobias M. Krieger 1 , Marcus Reindl 1 , Christian Schimpf 1 , Rinaldo Trotta 2 , Armando Rastelli 1
Affiliation  

This Perspective presents an overview on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication such as entanglement swapping and quantum key distribution.

中文翻译:

通过液滴蚀刻外延生长的 GaAs 量子点作为量子光源

本视角概述了通过液滴蚀刻方法获得的 GaAs 量子点作为高质量量子光源的外延生长和光学特性。我们展示了关于单光子和偏振纠缠光子对的产生以及这些源在量子通信中具有核心重要性的应用(例如纠缠交换和量子密钥分配)中的使用的最新成就。
更新日期:2021-09-24
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