Unlike traditional logic transistors, hot carrier degradation (HCD) in power transistors involves simultaneous and potentially correlated degradation in multiple regions. One must deconvolve and characterize the voltage- and temperature-dependence of these region-specific degradations to develop a predictive HCD model of power transistors. Unfortunately, power transistors' doping and geometrical complexities make it challenging to use traditional defect-profiling techniques, such as charge-pumping or gated-diode methods. This Letter uses a physics-based tandem-FET model of an Laterally Diffused MOS (LDMOS) transistor to develop a “three-point I–V spectroscopy” technique that uses the time-evolution of three critical points of the measured I–V characteristics to extract mobility and threshold voltage degradations in the channel and drift regions. This innovative approach should generalize to other configurations of the LDMOS transistor as well.

中文翻译：

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三点 I-V 光谱解卷积 LDMOS 晶体管中特定于区域的退化

与传统的逻辑晶体管不同，功率晶体管中的热载流子退化 (HCD) 涉及多个区域的同时且潜在相关的退化。必须对这些区域特定退化的电压和温度依赖性进行去卷积和表征，以开发功率晶体管的预测 HCD 模型。不幸的是，功率晶体管的掺杂和几何复杂性使得使用传统的缺陷分析技术（例如电荷泵或门控二极管方法）具有挑战性。这封信使用横向扩散 MOS (LDMOS) 晶体管的基于物理的串联 FET 模型来开发“三点 I-V 光谱”技术，该技术使用测量的 I-V 特性的三个关键点的时间演变提取沟道和漂移区中的迁移率和阈值电压退化。这种创新方法也应该推广到 LDMOS 晶体管的其他配置。