We present a theoretical study of near-field radiative thermal rectification combining phase-transition and high-infrared-transmittance materials. The phase-transition material vanadium dioxide (VO₂), with a metal–insulator transition near 341 K, is utilized under a reasonable temperature. Four types of high-infrared-transmittance materials, including potassium bromide, sodium chloride, polyethylene, and magnesium fluoride, are introduced as thin film substrates under a VO₂ grating on one side of the near-field rectifier. We explore the effects of various high-infrared-transmittance thin-film substrates and relevant geometric parameters on the thermal rectification of the device. The results show that thermal rectification can be greatly enhanced by using a one-dimensional VO₂ grating backed with a high-infrared-transmittance thin-film substrate. With the introduction of a high-infrared-transmittance substrate, the rectification ratio is dramatically boosted due to the enhancement of the substrate transmittance. This work predicts a remarkable rectification ratio as high as 161—greater than the recently reported peak values for comparable near-field radiative thermal rectification. The results outlined herein will shed light on the rapidly expanding fields of nanoscale thermal harvesting, conversion, and management.

中文翻译：

---

使用红外透明薄膜背面相变超表面的超高整流近场辐射热二极管

我们提出了结合相变和高红外透射率材料的近场辐射热整流的理论研究。相变材料二氧化钒 (VO ₂ ) 的金属-绝缘体转变温度接近 341 K，可在合理的温度下使用。在近场整流器一侧的VO ₂光栅下引入溴化钾、氯化钠、聚乙烯和氟化镁四种高红外透射材料作为薄膜衬底。我们探索了各种高红外透射薄膜基板和相关几何参数对器件热整流的影响。结果表明，使用一维 VO 可以大大增强热整流₂光栅背衬高红外透射率薄膜基板。随着高红外线透过率基板的引入，由于基板透过率的提高，整流比显着提高。这项工作预测了高达 161 的显着整流比 - 大于最近报道的类似近场辐射热整流的峰值。本文概述的结果将阐明快速扩展的纳米级热收集、转换和管理领域。