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Photovoltaic characterizing method of degradation of polymer light-emitting diodes based on ideality factor and density of states
Applied Physics Letters ( IF 4 ) Pub Date : 2021-09-21 , DOI: 10.1063/5.0057615
Jaehoon Kim 1 , Taesoo Lee 1 , Jeonghun Kwak 1 , Changhee Lee 1
Affiliation  

Polymer light-emitting diodes (PLEDs) possess several unique advantages over competitive technologies, including solution processability, broad applicability, and low-cost fabrication. However, their commercialization is delayed due to the relatively low operation stability compared to current display techniques. To provide fundamental insight into the degradation mechanism and enhance the stability, we discuss unique analysis methods of PLEDs' degradation using photovoltaic impedance characteristics. In particular, we report the method to determine the energetic disorder or density of states (DOS) of PLEDs using light intensity (Plight)-dependent open-circuit voltage (VOC) and Cole–Cole plot measurement. Based on the method, it was found that PLED degradation results in a shift of the center of DOS rather than broadening. Furthermore, we extrapolated equivalent ideality factor (n) values from the Plight-dependent VOC and dark current density–voltage (JV) characteristics, which implied trap-assisted recombination throughout the degradation process. Thus, we believe that the results will provide helpful and comprehensive insight into understanding the degradation of PLEDs.

中文翻译:

基于理想因子和态密度的聚合物发光二极管降解光伏表征方法

聚合物发光二极管 (PLED) 与竞争技术相比具有几个独特的优势,包括溶液可加工性、广泛的适用性和低成本制造。然而,与目前的显示技术相比,由于操作稳定性相对较低,它们的商业化被推迟。为了提供对退化机制的基本见解并提高稳定性,我们讨论了使用光伏阻抗特性的 PLED 退化的独特分析方法。特别是,我们报告了使用光强度(P light)依赖的开路电压(V OC) 和 Cole-Cole 图测量。基于该方法,发现 PLED 退化导致 DOS 中心的移动而不是加宽。此外,我们从P依赖的V OC和暗电流密度 - 电压(J - V)特性推断等效理想因子(n)值,这意味着在整个降解过程中陷阱辅助复合。因此,我们相信这些结果将为理解 PLED 的退化提供有用和全面的见解。
更新日期:2021-09-24
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