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Peculiarities of recrystallization activated by a diffusion flow of an impurity from a thin-film coating
The European Physical Journal B ( IF 1.6 ) Pub Date : 2021-09-24 , DOI: 10.1140/epjb/s10051-021-00203-x
S. E. Savotchenko 1
Affiliation  

Abstract

We propose new model of recrystallization activated by a diffusion flux of impurity atoms from a thin coating of the surface of a metal sample. The model is based on diffusion equation with a stepwise diffusion coefficient and moving boundary corresponding to the front of recrystallization. We obtain the explicit exact solution of the problem formulated, which describes the distribution of impurity concentration. We derive the analytical dependences of the depth of the recrystallized layer and recrystallization rate on time within the framework of the formulated model. The results obtained agree with the fact that the process of migration of grain boundaries, which causes recrystallization, develops under conditions of constant feeding of the boundaries by impurities diffusing from the surface.

Graphic abstract



中文翻译:

薄膜涂层中杂质扩散流激活的再结晶特性

摘要

我们提出了由来自金属样品表面薄涂层的杂质原子的扩散通量激活的新再结晶模型。该模型基于具有逐步扩散系数和对应于再结晶前沿的移动边界的扩散方程。我们获得了问题的明确精确解,它描述了杂质浓度的分布。我们在公式化模型的框架内推导出再结晶层深度和再结晶速率对时间的分析依赖性。所得结果与导致再结晶的晶界迁移过程是在杂质从表面扩散而不断进给晶界的条件下发展的事实一致。

图形摘要

更新日期:2021-09-24
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