We present the physics and performance space of the tri-gate GaN junction high electron mobility transistor (Tri-JHEMT), a new tri-gate GaN device proposed recently. In Tri-JHEMTs, p-n junctions wrap around two-dimensional-electron-gas (2DEG) fins in the gate region. Our fabricated Tri-JHEMT demonstrates, for the first time, the kilovolt blocking capability at 150 °C in all tri-gate GaN high electron mobility transistors (HEMTs). Three-dimensional TCAD simulations were then calibrated with experimental devices and used to study p-GaN-based Tri-JHEMTs with various design parameters for a direct comparison with the industrial planar p-gate GaN HEMTs. Owing to the unique physics of the sidewall p-GaN/2DEG junction, the 2DEG distribution in junction tri-gates is very different from that in conventional tri-gates, enabling smaller gate capacitance and superior gate controllability. As a result, a lower resistance in the gated channel, a higher wafer 2DEG density, and a scaled gate length can be concurrently realized in normally-OFF Tri-JHEMTs. GaN Tri-JHEMTs designed for a wide range of voltage classes (15–1200 V) are predicted to enable a 15%–75% lower ON-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}$ ), 3–10-fold smaller ${R}_{ \mathrm{\scriptscriptstyle ON}}\cdot {Q}_{\mathrm {G}}$ (gate charge), and 45%–63% smaller ${R}_{ \mathrm{\scriptscriptstyle ON}}\cdot {Q}_{\mathrm {OSS}}$ (output charge) as compared with similarly rated planar p-gate HEMTs. Considering their fabrication compatibility with existing foundry process, Tri-JHEMTs show great potentials as the next-generation lateral GaN power switches.

中文翻译：

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三栅极 GaN 结 HEMT：物理和性能空间

我们展示了三栅极 GaN 结高电子迁移率晶体管 (Tri-JHEMT) 的物理和性能空间，这是最近提出的一种新的三栅极 GaN 器件。在 Tri-JHEMT 中，pn 结环绕栅极区域中的二维电子气 (2DEG) 鳍。我们制造的 Tri-JHEMT 首次展示了所有三栅极 GaN 高电子迁移率晶体管 (HEMT) 在 150°C 下的千伏阻隔能力。然后使用实验设备校准三维 TCAD 模拟，并用于研究具有各种设计参数的基于 p-GaN 的 Tri-JHEMT，以便与工业平面 p-gate GaN HEMT 进行直接比较。由于侧壁 p-GaN/2DEG 结的独特物理特性，结三栅中的 2DEG 分布与传统三栅中的非常不同，实现更小的栅极电容和卓越的栅极可控性。因此，在常关型 Tri-JHEMT 中可以同时实现栅极通道中较低的电阻、较高的晶圆 2DEG 密度和按比例缩小的栅极长度。为广泛的电压等级 (15–1200 V) 设计的 GaN Tri-JHEMT 预计可使导通电阻降低 15%–75% ( ${R}_{ \mathrm{\scriptscriptstyle ON}}$ )，小 3–10 倍 ${R}_{ \mathrm{\scriptscriptstyle ON}}\cdot {Q}_{\mathrm {G}}$ （栅极电荷），并且小 45%–63% ${R}_{ \mathrm{\scriptscriptstyle ON}}\cdot {Q}_{\mathrm {OSS}}$ （输出电荷）与类似额定的平面 p 栅极 HEMT 相比。考虑到它们与现有代工工艺的制造兼容性，Tri-JHEMT 显示出作为下一代横向 GaN 功率开关的巨大潜力。