In this article, for the first time, self-rectifying memristors are exploited for logic-in-memory computation. We report a Pt/TaO _x /Ta memristor with salient self-rectifying bipolar features (10 ⁴ ON-/ OFF-ratio, 10 ⁵ rectification ratio, 10 ⁵ nonlinearity, and ~1 pA leakage current), which could support a large passive crossbar array up to 160 Mb with the premise of 10% read margin. Moreover, we propose and experimentally validate a controlled majority-inverter graph logic method based on the self-rectifying switching behaviors, with advantages in computation complexity. Our work is a step forward toward in-memory computing in high-density or even 3-D memristor architectures.

中文翻译：

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具有高度非线性、自整流忆阻器的受控多数逆变器图形逻辑

在本文中，自整流忆阻器首次被用于内存中的逻辑计算。我们报告了一种 具有显着自整流双极特性的 Pt/TaO _x /Ta 忆阻器（10 ^{4 导通}/关断比、10 ⁵整流比、10 ⁵非线性和~1 pA 漏电流），它可以支持大的无源crossbar 阵列高达 160 Mb，前提是 10% 的读取余量。此外，我们提出并实验验证了一种基于自整流开关行为的受控多数逆变器图逻辑方法，在计算复杂度方面具有优势。我们的工作是朝着高密度甚至 3-D 忆阻器架构中的内存计算迈出的一步。