A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is proposed for the first time. In the proposed unit NEMTCAM cell, a single nanoelectromechanical (NEM) memory switch replaces two static random access memory cells. Due to the monolithic 3-D (M3D) integration and nonvolatile property of NEM memory switches, the proposed NEMTCAM achieves an 86.3% smaller area, 75.0% lower dynamic power consumption, and a 76.6% higher search speed than conventional ternary content-addressable memory (TCAM) in addition to a negligible static leakage current.

中文翻译：

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基于纳米机电开关的三元内容可寻址存储器 (NEMTCAM)

首次提出了一种基于三态纳米机电开关的三元内容可寻址存储器（NEMTCAM）。在提议的单元 NEMTCAM 单元中，单个纳米机电 (NEM) 存储器开关取代了两个静态随机存取存储器单元。由于 NEM 存储器开关的单片 3-D (M3D) 集成和非易失性特性，与传统的三元内容可寻址存储器相比，所提出的 NEMTCAM 的面积减小了 86.3%，动态功耗降低了 75.0%，搜索速度提高了 76.6% (TCAM) 以及可忽略不计的静态泄漏电流。