The integration of complete Boolean logic gate and memory in a single device is imperative to develop future computing systems beyond von Neumann architecture. Specifically, the giant magnetoimpedance (GMI) effect has drawn much attention for the high sensitive magnetic sensor applications; however, its possible application in logic-in-memory devices has been rarely explored. This work studies the butterfly-shaped hysteresis GMI effect in the self-biased magnetic heterogeneous laminate (Ni/Fe ₂₅ Ni ₅₄ Co ₁₅ Si ₁ B ₅ /micro-planar coil/Fe ₂₅ Ni ₅₄ Co ₁₅ Si ₁ B ₅ /micro-planar coil/Fe ₂₅ Ni ₅₄ Co ₁₅ Si ₁ B ₅ /Ni) theoretically and experimentally. The proposed theoretical model based on the nonlinear constitutive model of magnetostrictive material, magnetic charge theory, and Maxwell equations indicates that the permeability of Fe ₂₅ Ni ₅₄ Co ₁₅ Si ₁ B ₅ ribbon is modulated by the varied remanent magnetostatic field and magnetostrictive stress of neighboring Ni ribbon simultaneously, which demonstrates multilevel remanent magnetoimpedance after the external magnetic field is turned off. This is useful for the nonvolatile multistate memory application. Furthermore, 16 complete nonvolatile Boolean logic functions can be also implemented in a single GMI device within three operation cycles. This study provides a promising candidate for future logic-in-memory architecture.

中文翻译：

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在单个自偏置磁阻器件中实现非易失性多态存储器和所有 16 个布尔逻辑功能

将完整的布尔逻辑门和存储器集成在单个设备中对于开发超越冯诺依曼架构的未来计算系统势在必行。具体而言，巨磁阻抗（GMI）效应在高灵敏度磁传感器应用中备受关注；然而，很少有人探索它在内存逻辑器件中的可能应用。本工作研究了自偏置磁性异质叠片（Ni/Fe ₂₅ Ni ₅₄ Co ₁₅ Si ₁ B ₅ /微平面线圈/Fe ₂₅ Ni ₅₄ Co ₁₅ Si ₁ B _5）中的蝶形磁滞GMI效应 /微平面线圈/Fe ₂₅ Ni ₅₄ Co ₁₅ Si ₁ B ₅ /Ni) 理论上和实验上。提出的基于磁致伸缩材料非线性本构模型、磁荷理论和麦克斯韦方程的理论模型表明，Fe ₂₅ Ni ₅₄ Co ₁₅ Si ₁ B ₅的磁导率 镍带同时受到变化的剩余静磁场和相邻镍带的磁致伸缩应力的调制，在外部磁场关闭后表现出多级剩磁阻抗。这对于非易失性多态存储器应用很有用。此外，还可以在三个操作周期内在单个 GMI 设备中实现 16 个完整的非易失性布尔逻辑功能。这项研究为未来的逻辑内存架构提供了一个有希望的候选者。