Contact-controlled devices, such as source-gated transistors (SGTs), deliberately use energy barriers at the source, and naturally, the positive temperature dependence (PTD) of drain current can be utilized for temperature sensing. We exploit the difference in drain current activation energy, which arises with contact doping in polysilicon n-type contact-controlled transistors, to demonstrate output current with either a PTD or negative temperature dependence (NTD). The range over which output current varies linearly with temperature, as well as the sensitivity, can be tailored by the choice of reference current magnitude and relative source contact properties within the current mirror. The sensing scheme simplifies the circuit design because it relies solely on thin-film transistors and it has inherent immunity to output voltage variation. This ability to tune the sign of temperature dependence allows facile integration in applications requiring homeostasis via feedback, e.g., electronic skin, in a minimal layout area and potentially with convenient reduction of patterning steps during fabrication.

中文翻译：

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接触掺杂作为基于 TFT 的紧凑型温度传感的设计策略

接触控制的器件，例如源极门控晶体管 (SGT)，有意在源极使用能量势垒，自然，漏极电流的正温度依赖性 (PTD) 可用于温度感测。我们利用多晶硅 n 型接触控制晶体管中的接触掺杂引起的漏极电流激活能的差异来证明输出电流具有 PTD 或负温度依赖性 (NTD)。输出电流随温度线性变化的范围以及灵敏度可以通过选择参考电流幅度和电流镜内的相对源接触特性来定制。传感方案简化了电路设计，因为它完全依赖于薄膜晶体管，并且对输出电压变化具有固有的免疫力。