Threshold voltage ( ${V}_{\text {TH}}$ ) hysteresis affects the reliability of silicon carbide (SiC) MOSFETs. To evaluate the ${V}_{\text {TH}}$ hysteresis effect on switching characteristics, this article first investigates the ${V}_{\text {TH}}$ hysteresis in the static characteristics of three SiC MOSFETs with different gate structures. The results illustrate the density of the interface states in different gate structures. Then, the effect of ${V}_{\text {TH}}$ hysteresis on dynamic characteristics under varying OFF-state starting voltages ( ${V}_{\text {G}}^{ \mathrm{\scriptscriptstyle OFF}}$ ) is evaluated by experiment. Furthermore, the effect mechanism of ${V}_{\text {TH}}$ hysteresis and ${V}_{\text {G}}^{ \mathrm{\scriptscriptstyle OFF}}$ on switching characteristics is analyzed. Under the effect of the ${V}_{\text {TH}}$ hysteresis, a smaller ${V}_{\text {G}}^{ \mathrm{\scriptscriptstyle OFF}}$ reduces ${V}_{\text {TH}}$ when the device turns on. This phenomenon leads to a reduction in the turn-on delay and consequently lowers the turn-on loss. Therefore, the ${V}_{\text {TH}}$ hysteresis is a significant factor for gate driver design of SiC MOSFETs.

中文翻译：

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阈值电压滞后对碳化硅 MOSFET 开关特性的影响

阈值电压（ ${V}_{\text {TH}}$ ) 滞后影响碳化硅 (SiC) MOSFET 的可靠性。为了评估 ${V}_{\text {TH}}$ 滞后效应对开关特性的影响，本文首先研究了 ${V}_{\text {TH}}$ 具有不同栅极结构的三个 SiC MOSFET 静态特性的滞后。结果说明了不同栅极结构中界面态的密度。那么效果如下 ${V}_{\text {TH}}$ 不同断态启动电压下动态特性的滞后（ ${V}_{\text {G}}^{ \mathrm{\scriptscriptstyle OFF}}$ ) 通过实验评估。此外，作用机制 ${V}_{\text {TH}}$ 滞后和 ${V}_{\text {G}}^{ \mathrm{\scriptscriptstyle OFF}}$ 对开关特性进行了分析。在影响下 ${V}_{\text {TH}}$ 滞后，较小 ${V}_{\text {G}}^{ \mathrm{\scriptscriptstyle OFF}}$ 减少 ${V}_{\text {TH}}$ 当设备开启时。这种现象导致导通延迟的减少，从而降低了导通损耗。因此，该 ${V}_{\text {TH}}$ 迟滞是 SiC MOSFET 栅极驱动器设计的重要因素。