A novel high-performance 1700-V 4H-Silicon carbide (SiC) junction field-effect transistor (JFET) with reverse recovery capability and low switching loss is proposed in this article. As for the proposed 4H-SiC JFET, the gate region of the conventional 4H-SiC JFET is split into two segments, one of which is replaced by the source. A Schottky barrier diode (SBD) is integrated in the sidewall of the channel region, which greatly improves the performances of the 4H-SiC JFET. Compared with the conventional 4H-SiC JFET, the numerical simulation results show that the specific ON-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON},\text{ sp}}$ ), gate–drain capacitance ( ${C}_{\text{GD}}$ ), and gate–drain charge ( ${Q}_{\text{gd}}$ ) of the proposed 4H-SiC JFET are reduced by 25.57%, 99.96%, and 72.91%, respectively. The switching loss is reduced by about 91%, and the average gate drive power consumption is reduced by more than 36% while the frequency range is from 10 to 400 kHz. The results also demonstrate that the proposed device has good reverse recovery performance and reduces switching loss, compared with the current commercial SiC devices.

中文翻译：

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具有反向恢复能力和低开关损耗的高性能 4H-SiC JFET

本文提出了一种具有反向恢复能力和低开关损耗的新型高性能 1700V 4H-碳化硅 (SiC) 结型场效应晶体管 (JFET)。至于提议的 4H-SiC JFET，传统 4H-SiC JFET 的栅极区被分成两部分，其中之一被源极代替。沟道区侧壁集成肖特基势垒二极管（SBD），大大提高了4H-SiC JFET的性能。与传统的 4H-SiC JFET 相比，数值模拟结果表明，比导通电阻 ( ${R}_{ \mathrm{\scriptscriptstyle ON},\text{ sp}}$ ), 栅漏电容 ( ${C}_{\text{GD}}$ ) 和栅漏电荷 ( ${Q}_{\text{gd}}$ ) 的 4H-SiC JFET 分别降低了 25.57%、99.96% 和 72.91%。开关损耗降低约 91%，平均栅极驱动功耗降低 36% 以上，频率范围为 10 至 400 kHz。结果还表明，与当前的商用 SiC 器件相比，所提出的器件具有良好的反向恢复性能并降低了开关损耗。