This article presents the 2-D numerical simulation results of the heavy-ion-induced leakage current degradation and single-event burnout (SEB) in the rated 1.2-kV silicon-carbide (SiC) super-junction (SJ) vertical diffusion metal-oxide-semiconductor (VDMOS). The employed simulation physics models were validated by the heavy-ion irradiation experiments of the commercially rated 1.2-kV SiC common VDMOS (C-VDMOS), which indicated a severe degeneration threshold of 500 V. The SiC common SJ VDMOS (C-SJ VDMOS) was proven to be sensitive to high-energy heavy-ion and represents comparative SEB performance compared with the SiC C-VDMOS. The robustness of the SiC SJ VDMOS with different single buffer layer (SBL) designs against a heavy-ion was simulated. It is found that the maximum temperature in the source metal/SiC interface and bottom of the structure could be compromised by the thickness of the buffer layer. As a result, the SiC SJ VDMOS with an optimal SBL exhibited a severe degeneration threshold of 800 V, which was a 60% increase compared to the SiC C-SJ VDMOS.

中文翻译：

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额定1.2-kV 4H-SiC超结VDMOS单粒子烧毁仿真研究

本文介绍了额定 1.2 kV 碳化硅 (SiC) 超级结 (SJ) 垂直扩散金属中重离子引起的漏电流退化和单粒子烧毁 (SEB) 的二维数值模拟结果。氧化物半导体 (VDMOS)。所采用的仿真物理模型通过商用额定 1.2-kV SiC 共 VDMOS (C-VDMOS) 的重离子辐照实验进行验证，表明严重退化阈值为 500 V。 SiC 共 SJ VDMOS (C-SJ VDMOS) ) 被证明对高能重离子敏感，并代表与 SiC C-VDMOS 相比的比较 SEB 性能。模拟了具有不同单缓冲层 (SBL) 设​​计的 SiC SJ VDMOS 对重离子的稳健性。发现源金属/SiC 界面和结构底部的最高温度可能会受到缓冲层厚度的影响。结果，具有最佳 SBL 的 SiC SJ VDMOS 表现出 800 V 的严重退化阈值，与 SiC C-SJ VDMOS 相比增加了 60%。