In this article, the normally- OFF etching-free p-GaN stripe array gate AlGaN/GaN high-electron-mobility-transistors (PSAG-HEMTs) are designed and experimentally demonstrated through hydrogen plasma treatment. The unique threshold voltage ( ${V}_{TH}$ ) modulation technique based on the PSAG structure is proposed and simulated. Using this method, the ${V}_{TH}$ can be continuously shifted from −0.14 to +1.03 V by just tuning the widths of p-GaN ( ${W}_{p}$ ) and hydrogenated p-GaN (HR-GaN) stripes. To improve breakdown voltage (BV), the PSAG is extended to the drain side based on the 3-D simulation results so that a new electric-field peak is introduced at the edge of the PSAG in the drain side and then the surface electric field is optimized. Besides this, an enhanced conductivity effect is observed and results in a low ON-resistance. The fabricated PSAG-HEMT with $0.75~\mu \text{m}~{W}_{p}$ and 4- $\mu \text{m}$ extension length ( ${L}_{E}$ ) exhibits a positive ${V}_{TH}$ of +0.8 V, a low specific ON-resistance ( ${R}_{\text {ON,sp}}$ ) of 2.73 $\text{m}\Omega \cdot cm^{2}$ , a high BV of 852 V (1449 V) at ${I}_{D} = 1 ~\mu \text{A}$ /mm, and BFOM of 266 MW/cm ² (769 MW/cm ² ) with substrate grounded (floating), which demonstrate significant improvements over Reference single-gate E-mode and D-mode devices. This work provides a promising architecture for future high voltage normally- OFF p-GaN HEMT devices.

中文翻译：

---

使用免蚀刻 p-GaN 条状阵列栅极改善常关型 AlGaN/GaN HEMT 的击穿电压和导通电阻

在本文中，设计了常关断免蚀刻 p-GaN 条纹阵列栅极 AlGaN/GaN 高电子迁移率晶体管 (PSAG-HEMT)，并通过氢等离子体处理进行了实验验证。独特的阈值电压（ ${V}_{TH}$ )提出并仿真了基于PSAG结构的调制技术。使用这种方法， ${V}_{TH}$ 只需调整 p-GaN 的宽度，就可以从 -0.14 V 连续移动到 +1.03 V（ ${W}_{p}$ ) 和氢化 p-GaN (HR-GaN) 条纹。为了提高击穿电压 (BV)，基于 3-D 模拟结果将 PSAG 扩展到漏极侧，以便在漏极侧的 PSAG 边缘引入新的电场峰值，然后引入表面电场被优化。除此之外，还观察到增强的导电效应并导致低导通电阻。制造的 PSAG-HEMT 具有 $0.75~\mu \text{m}~{W}_{p}$ 和 4- $\mu \text{m}$ 延伸长度（ ${L}_{E}$ ) 表现出积极的 ${V}_{TH}$ +0.8 V，低特定导通电阻（ ${R}_{\text {ON,sp}}$ ) 的 2.73 $\text{m}\Omega \cdot cm^{2}$ , 852 V (1449 V) 的高 BV ${I}_{D} = 1 ~\mu \text{A}$ /mm 和 266 MW/cm ² (769 MW/cm ² ) 的BFOM， 衬底接地（浮动），这证明了与参考单栅极 E 模式和 D 模式器件相比的显着改进。这项工作为未来的高压常关 p-GaN HEMT 器件提供了一种有前途的架构。