The mobility degradation with channel length is examined from the viewpoint of electrostatic effects that alter not only the threshold voltage but also the transport properties. Even operated at low drain voltage, short MOSFETs are subject to a strong lateral electric field present over a significant portion of the channel. The lateral field, responsible for threshold voltage roll-off, causes a local degradation in the velocity and mobility of electrons and holes. The low-mobility regions located near the source and drain tend to merge in short devices, giving rise to an ineluctable mobility collapse that compromises the benefit of downscaling. This mechanism is fundamental and universal as it applies to all kinds of MOSFETs. A model of mobility collapse, totally different from existing theories, is proposed together with supportive numerical simulations.

中文翻译：

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短MOSFET中迁移率崩溃的内在机制

从不仅改变阈值电压而且改变传输特性的静电效应的角度检查随沟道长度的迁移率退化。即使在低漏极电压下工作，短 MOSFET 也会受到存在于沟道很大一部分上的强横向电场的影响。负责阈值电压滚降的横向场会导致电子和空穴的速度和迁移率局部降低。位于源极和漏极附近的低迁移率区域倾向于在短器件中合并，导致不可避免的迁移率崩溃，从而损害了缩小规模的好处。这种机制是基本的和通用的，因为它适用于所有类型的 MOSFET。一个流动性崩溃的模型，完全不同于现有的理论，