Conventionally, silver (Ag) electrodes for organic thin-film transistors (OTFTs) are prepared by evaporated method at high temperature. In this work, we report a new methodology to fabricate the Ag source/drain electrodes of flexible OTFTs arrays by chemically plated technique on polyimide substrate at room temperature. The indacenodithiophene-co-benzothiadiazole (IDT-BT) OTFTs with chemically plated electrodes obtain the saturation mobility of 0.25 cm $^{2}\text{V}^{-1}\text{s}^{-1}$ . Furthermore, compared with high-temperature thermal evaporation method, the subthreshold swing of the IDT-BT OTFTs decreases from 1.97 to 0.89 V/dec with chemically plated Ag source/drain electrodes. The smaller threshold voltage and contact resistance are also obtained, owing to the change of work function. The bending tests indicate that the electrical properties of the devices maintain unchanged during tensile bending at a radius up to 1.4 mm. Moreover, the electrical property of the devices remains stable at a tensile bending cycle of 1000 cycles at a radius of 2.5 mm. This proposed methodology has great potential for flexible and wearable electronic devices.

中文翻译：

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通过化学镀银电极在聚酰亚胺基板上具有高机械稳定性的柔性有机薄膜晶体管

通常，用于有机薄膜晶体管 (OTFT) 的银 (Ag) 电极是通过高温蒸镀法制备的。在这项工作中，我们报告了一种在室温下通过化学镀技术在聚酰亚胺基板上制造柔性 OTFT 阵列的 Ag 源/漏电极的新方法。具有化学镀电极的茚二噻吩-共-苯并噻二唑 (IDT-BT) OTFT 获得 0.25 cm 的饱和迁移率 $^{2}\text{V}^{-1}\text{s}^{-1}$ . 此外，与高温热蒸发方法相比，IDT-BT OTFT 的亚阈值摆幅从 1.97 V/dec 降低到 0.89 V/dec，采用化学镀银源/漏电极。由于功函数的变化，也获得了更小的阈值电压和接触电阻。弯曲测试表明，器件的电性能在半径高达 1.4 mm 的拉伸弯曲期间保持不变。此外，器件的电性能在半径为 2.5 mm 的 1000 次拉伸弯曲循环中保持稳定。这种提出的方​​法对于柔性和可穿戴电子设备具有巨大的潜力。