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Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2021-08-30 , DOI: 10.1109/ted.2021.3105498
Taofei Pu , Xiaobo Li , Junye Wu , Jiaying Yang , Youming Lu , Xinke Liu , Jin-Ping Ao

AlGaN/GaN Schottky barrier diode (SBD) temperature sensor with low turn-on voltage was fabricated by employing the recessed anode structure. This AlGaN/GaN SBD demonstrates good rectification in a broad temperature scope from 298 to 473 K. Compared with common planar diode, the recessed anode SBD shows a relatively lower turn-on voltage and better Schottky contact characteristics. The temperature-dependent forward voltage at a fixed current displays great linearity, contributing to a sensitivity of about 1.0 mV/K. The calculated sensitivities exhibit the downtrend by increasing current level, which is in agreement with the thermionic emission (TE) model. The recessed anode AlGaN/GaN SBDs show good potential in temperature sensor application.

中文翻译:

用于温度传感器应用的嵌入式阳极 AlGaN/GaN 肖特基势垒二极管

采用凹入式阳极结构制造了具有低导通电压的 AlGaN/GaN 肖特基势垒二极管 (SBD) 温度传感器。这种 AlGaN/GaN SBD 在 298 至 473 K 的宽温度范围内表现出良好的整流效果。与普通平面二极管相比,凹入式阳极 SBD 显示出相对较低的导通电压和更好的肖特基接触特性。固定电流下的温度相关正向电压显示出很好的线性度,灵敏度约为 1.0 mV/K。计算出的灵敏度随着电流水平的增加而呈现下降趋势,这与热电子发射 (TE) 模型一致。凹入式阳极 AlGaN/GaN SBD 在温度传感器应用中显示出良好的潜力。
更新日期:2021-09-24
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