Gallium (Ga) is one of the most important elements that are widely used in electronic devices. The development of Ga recovery technology is an important issue for resource recycling. In this study, di-(2-ethylhexyl)phosphoric acid (D2EHPA)-modified XAD-4 resin (DMR) is prepared by the solvent-nonsolvent method. The evolution of pore characteristics demonstrates that the solvent-nonsolvent treatment is advantageous for the immobilization of D2EHPA in XAD-4 resin. The adsorption isotherm of Ga(III) can be described by the Langmuir isotherm model. The Ga(III) adsorption kinetics follows the pseudo-second-order model. The immobilized D2EHPA shows good stability. The reusability study indicates that DMR can maintain the performance after three cycles of adsorption and stripping. The results for the treatment of a practical leaching solution from GaN/Al₂O₃ wafer further demonstrate that DMR can be applied effectively for Ga(III) recovery.

中文翻译：

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溶剂-非溶剂改性制备的二(2-乙基己基)磷酸 (D2EHPA)-改性 XAD-4 树脂提取 Ga(III)

镓 (Ga) 是广泛用于电子设备的最重要元素之一。Ga回收技术的发展是资源回收利用的重要课题。本研究采用溶剂-非溶剂法制备二-(2-乙基己基)磷酸(D2EHPA)-改性XAD-4树脂(DMR)。孔特征的演变表明溶剂-非溶剂处理有利于将 D2EHPA 固定在 XAD-4 树脂中。Ga(III)的吸附等温线可以用Langmuir等温线模型描述。Ga(III) 吸附动力学遵循准二级模型。固定化的 D2EHPA 显示出良好的稳定性。可重复使用性研究表明，DMR 在吸附和汽提三个循环后仍能保持性能。从 GaN/Al 中处理实际浸出溶液的结果₂ O ₃晶片进一步证明DMR可以有效地应用于Ga(III)回收。