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The influence of seed layer electroplating time on structural properties, optical energy bandgap, diameter, growth orientation and surface roughness of ZnO nanorods
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2021-09-21 , DOI: 10.1007/s10854-021-07034-7
Umut Saraç 1 , M. Celalettin Baykul 2
Affiliation  

In this paper, the influence of the seed layer electroplating time (tseed layer) on the structural properties, optical energy bandgap, diameter, growth orientation and surface roughness of zinc oxide (ZnO) nanorods (NRs) electrochemically deposited from an oxygenated aqueous zinc chloride electrolyte solution was studied. Prior to actual electrochemical fabrication of subsequent ZnO NRs, the ZnO seed layers were first electroplated on the indium tin oxide (ITO) covered glass substrates at different tseed layer values of 25 s, 50 s and 100 s under a constant current density. The subsequent ZnO NRs were electrochemically deposited on the prepared ZnO seed layers at a constant cathode potential. For comparison, the ZnO NRs was also deposited on the ITO-covered glass substrates without a seed layer (tseed layer = 0 s). The surface morphologies of the ZnO NRs were characterized using an atomic force microscopy and a scanning electron microscopy. The results revealed that the shape of the ZnO NRs is affected by the tseed layer value and the diameter and surface roughness of the ZnO NRs can be reduced considerably by controlling the tseed layer. The ZnO sample grown at the tseed layer of 50 s consisted of completely hexagonal-shaped NRs with the smallest mean diameter and exhibited the smoothest top surface. X-ray diffraction measurements confirmed the creation of the hexagonal wurtzite crystal structure for all samples. The ZnO NRs fabricated at the tseed layer of 50 s displayed the best preferential growth orientation along c-axis. Structural analysis also showed that the samples have nano-sized crystallites ranging from 50 to 56 nm. The ZnO NRs without the seed layer had an energy bandgap of 3.318 eV while the ZnO NRs prepared on the seed layers exhibited an energy bandgap value in the range of 3.370 ± 0.006 eV, which was inversely proportional to the mean crystallite size of the samples.



中文翻译:

种子层电镀时间对ZnO纳米棒结构特性、光能带隙、直径、生长方向和表面粗糙度的影响

在本文中,种子层电镀时间(t种子层)对氧化锌(ZnO)纳米棒(NRs)的结构特性、光能带隙、直径、生长取向和表面粗糙度的影响,该纳米棒由含氧锌水溶液电化学沉积而成。氯化物电解质溶液进行了研究。在随后的 ZnO NR 的实际电化学制造之前,首先将 ZnO 种子层电镀在不同t种子层的氧化铟锡 (ITO) 覆盖的玻璃基板上恒定电流密度下 25 秒、50 秒和 100 秒的值。随后的 ZnO NRs 以恒定的阴极电位电化学沉积在制备的 ZnO 种子层上。为了进行比较,ZnO NRs 也沉积在 ITO 覆盖的玻璃基板上,没有种子层(t种子层 = 0 s)。使用原子力显微镜和扫描电子显微镜表征 ZnO NRs 的表面形貌。结果表明,ZnO NRs的形状受t种子层值的影响,通过控制t种子层可以显着降低ZnO NRs的直径和表面粗糙度。在t种子层生长的 ZnO 样品50 s 由完全六边形的 NRs 组成,具有最小的平均直径和最光滑的顶面。X 射线衍射测量证实了所有样品的六方纤锌矿晶体结构的产生。在50 s t种子层制造的 ZnO NRs显示出沿 c 轴的最佳优先生长方向。结构分析还表明,样品具有 50 至 56 nm 的纳米级微晶。没有种子层的 ZnO NRs 的能带隙为 3.318 eV,而在种子层上制备的 ZnO NRs 的能带隙值为 3.370 ± 0.006 eV,与样品的平均微晶尺寸成反比。

更新日期:2021-09-23
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