High-k nanocomposite photoresists are highly sought-after dielectric materials for the manufacturing and miniaturization of integrated capacitors. Herein, in-depth high voltage dielectric characterizations of Metal Polymer Composites (MPCs) having carbon-coated nickel nanoparticles (Ni@C) dispersed into epoxy-based photoresist (SU-8) are reported.

The MPCs were fabricated using three-step formulation (deagglomeration, surface functionalization and dispersion in a polymeric matrix) involving simple sonochemical methods. Finally, films of MPCs were deposited on silicon wafers by spin-coating, and Metal-Insulator-Semiconductor (MIS) capacitors were fabricated. Formulations with increasing nanoparticles/polymer volume fractions were prepared in order to determine a previously unestablished percolation threshold with (Ni@C) nanoparticles. The experimental results were modeled using the generalized power-law equation of the percolation theory (PT) and were compared with effective medium approximation (EMA).

An enhancement of the complex dielectric permittivity of $\sim$116% was detected keeping a reasonable value of losses of 0.32 at 5 kHz. However, no giant permittivity in vicinity of the percolation threshold was detected. The high-voltage dielectric properties showed the occurrence of two electron field emission mechanisms, but no electrical aging or dielectric breakdown below ±0.38 MV/cm occurred. This study shows a reliable wafer-scale film fabrication process of MPCs for the manufacturing of long-awaited miniaturization of high-voltage capacitors.

高k纳米复合光刻胶是用于制造和小型化集成电容器的备受追捧的介电材料。在此，报告了具有分散在环氧基光刻胶 (SU-8) 中的碳包覆镍纳米粒子 (Ni@C) 的金属聚合物复合材料 (MPC) 的深入高压介电特性。

MPC 是使用三步配方（解聚、表面功能化和在聚合物基质中分散）制造的，涉及简单的声化学方法。最后，通过旋涂将 MPC 薄膜沉积在硅片上，并制造出金属-绝缘体-半导体 (MIS) 电容器。制备具有增加的纳米颗粒/聚合物体积分数的配方，以确定先前未建立的（Ni@C）纳米颗粒的渗透阈值。实验结果使用渗流理论 (PT) 的广义幂律方程建模，并与有效介质近似 (EMA) 进行比较。

复合介电常数的增强 $～$检测到 116%，在 5 kHz 时保持 0.32 的合理损耗值。然而，在渗透阈值附近没有检测到巨大的介电常数。高压介电特性表明发生了两种电子场发射机制，但没有发生低于±0.38 MV/cm 的电老化或介电击穿。该研究展示了一种可靠的 MPC 晶圆级薄膜制造工艺，用于制造期待已久的高压电容器小型化。