Since the isolation of graphene, layered semiconducting materials, such as graphene oxide and molybdenum disulfide (MoS₂), have been used in flexible electronics interfaced with organic semiconductors. The knowledge of their interfacial properties is in progress as it is crucial for device optimization. In this study, we have investigated the electronic properties of the interfaces between MoS₂ and in-situ thermally deposited P3HT by photoelectron spectroscopies. For the MoS₂ substrates, a cleaved natural single crystal was used, as well as after in situ heating, and a CVD prepared MoS₂ in order to investigate the effect of the different preparation methods on the electronic structure. To investigate the interfacial properties, the P3HT was deposited stepwise in-situ, up to 7 nm, and after each step, the interface was examined by XPS and UPS. The P3HT was found to be aligned vertically to the MoS₂ basal plane. The interface energy diagrams are depicted, resulting in a hole barrier of 0.4 eV and an interface dipole of 0.7 eV. In the case of the CVD prepared MoS₂ gap states have been observed which affect the device performance and they should be taken into consideration.

由于石墨烯的分离，层状半导体材料，如氧化石墨烯和二硫化钼 (MoS ₂ )，已被用于与有机半导体接口的柔性电子产品。对它们的界面特性的了解正在进行中，因为这对于设备优化至关重要。在这项研究中，我们通过光电子光谱研究了MoS ₂和原位热沉积 P3HT之间界面的电子特性。对于 MoS ₂衬底，使用解理的天然单晶，以及在原位加热后，以及 CVD 制备的 MoS ₂以研究不同制备方法对电子结构的影响。为了研究界面特性，P3HT 在原位逐步沉积，最大 7 nm，在每一步之后，通过 XPS 和 UPS 检查界面。发现 P3HT 与 MoS ₂基面垂直对齐。描绘了界面能量图，导致 0.4 eV 的空穴势垒和 0.7 eV 的界面偶极子。在 CVD 制备的 MoS ₂间隙状态的情况下，已观察到影响器件性能的情况，应予以考虑。