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Emergence of triangular features on ion irradiated silicon (100) surface
Surface Science ( IF 1.9 ) Pub Date : 2021-09-22 , DOI: 10.1016/j.susc.2021.121951
Sukriti Hans 1, 2 , Mukesh Ranjan 1, 2
Affiliation  

Low-energy off-normal Ar+ ion irradiation induces triangular features superimposed by nanoscale ripple patterns on Si (100) surface. Within the ion beam parameters range reported here, triangular features appear and show stronger lateral dependency on angle of incidence. Simulations performed using non-linear continuum equation incorporating dispersion term develops similar triangular features observed experimentally. Tuning parameters r1 and α as described in reference (K.M. Loew, R.M. Bradley, Phys. Rev. E. 100 (2019) 012801) generate angle and fluence like effects as in experiments for the triangular features. Experiment and simulation confirm more triangular elevations than depressions and their number increases with incidence angle up to 67.



中文翻译:

在离子辐照的硅 (100) 表面上出现三角形特征

低能非正常氩气+离子辐射诱导三角形特征叠加在 Si (100) 表面上的纳米级波纹图案。在此处报告的离子束参数范围内,三角形特征出现并显示出对入射角更强的横向依赖性。使用包含色散项的非线性连续方程进行的模拟开发了实验观察到的类似三角形特征。调整参数r1α如参考文献 (KM Loew, RM Bradley, Phys. Rev. E. 100 (2019) 012801) 中所述,产生角度和通量类似的效果,如三角形特征的实验。实验和模拟证实了比凹陷更多的三角形高程,并且它们的数量随着入射角增加到 67.

更新日期:2021-09-22
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