The effect of misfit dislocation networks (MDNs) on the stability and shear strength of Cr/TiN was investigated using a newly developed modified embedded atom model parameterized to pure Cr, CrTi, CrN, and Cr/TiN interfacial properties. The interfacial energy was lowest when the MDN was located in the Cr layer adjacent to the chemical interface, which also had the largest dislocation core widths. This was consistent with generalized stacking fault energies, which had lower energy barriers between the first and second Cr layers next to the chemical interface. As the MDN moved away from the interface, dislocation core widths consistently decreased along with the interfacial energy. For all positions of MDNs, shear failure occurred in the ceramic, between the first and second TiN layers next to the chemical interface. The lowest shear strength was found for the system with the MDN in the first Cr layer with respect to the chemical interface. Only for this particular configuration was there a significant plastic deformation present.

使用新开发的修改嵌入原子模型研究了错配位错网络 (MDN) 对 Cr/TiN 稳定性和剪切强度的影响，该模型参数化为纯 Cr、CrTi、CrN 和 Cr/TiN 界面特性。当 MDN 位于与化学界面相邻的 Cr 层时，界面能最低，其位错核心宽度也最大。这与广义的堆垛层错能一致，在靠近化学界面的第一层和第二层 Cr 层之间具有较低的能垒。随着 MDN 远离界面，位错核心宽度随着界面能不断减小。对于 MDN 的所有位置，剪切破坏发生在陶瓷中，靠近化学界面的第一层和第二层 TiN 之间。对于在化学界面的第一层 Cr 中具有 MDN 的系统，发现了最低的剪切强度。仅对于这种特定配置，才存在显着的塑性变形。