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MgFe2O4 decoration of g-C3N4 nanosheets to enhance CIP oxidation in visible-light photocatalysis
Optical Materials ( IF 3.9 ) Pub Date : 2021-09-21 , DOI: 10.1016/j.optmat.2021.111598
Mohammad W. Kadi 1 , Reda M. Mohamed 1, 2 , Detlef W. Bahnemann 3, 4
Affiliation  

Pluronic 31R1 and MCM41 were utilized to synthesize mesoporous MgFe2O4/g-C3N4 heterostructures. The employed approach yields a high surface area product (120 m2g-1) with a bandgap (2.58 eV) that allows photocatalysis in the visible light regime. TEM images show an even distribution of spherical MgFe2O4 particles with sizes within the ∼10–15 nm range. Magnetization values of 44.0 emu g−1 for the optimal 3% MgFe2O4/g-C3N4 heterostructure were high compared to what have been reported. The photocatalytic ability MgFe2O4/g-C3N4 nanocomposite was greater than that of pure MgFe2O4 or g-C3N4. A tenfold increase in CIP photooxidation efficiency results from incorporation of MgFe2O4 nanoparticles onto g-C3N4 with a percentage concentration of 0–4%. The optimum photocatalyst concentration used was 1.6 g/L for a fast reaction time of 120 min. CIP photooxidation efficiency when using mesoporous 3% MgFe2O4/g-C3N4 was 100% while it was 10% for pure g-C3N4 and 18% for pure MgFe2O4. High dispersion of spherical MgFe2O4 nanoparticles on the surface of g-C3N4, the high surface area, narrow bandgap, the heterostructure that allows unhindered diffusion of CIP into the pore structure, and the superior charge-carrier separation ability resulted in the enhanced photocatalytic ability. Magnetic properties resin from MgFe2O4 addition facilitate the easy separation of the photocatalyst and allowing its recycling.



中文翻译:

g-C3N4 纳米片的 MgFe2O4 装饰以增强可见光光催化中的 CIP 氧化

Pluronic 31R1 和 MCM41 用于合成介孔 MgFe 2 O 4 /gC 3 N 4异质结构。所采用的方法产生具有带隙 (2.58 eV)的高表面积产物 (120 m 2 g -1 ),允许在可见光范围内进行光催化。TEM 图像显示球形MgFe 2 O 4颗粒的均匀分布,其尺寸在~10-15 nm 范围内。最佳 3% MgFe 2 O 4 /gC 3 N 4 的磁化值为 44.0 emu g -1与已报道的相比,异质结构较高。MgFe 2 O 4 /gC 3 N 4纳米复合材料的光催化能力大于纯MgFe 2 O 4或gC 3 N 4的光催化能力。由于将 MgFe 2 O 4纳米颗粒以 0–4% 的百分比浓度加入 gC 3 N 4上,CIP 光氧化效率提高了 10 倍。所用的最佳光催化剂浓度为 1.6 g/L,反应时间为 120 分钟。使用介孔 3% MgFe 2 O 4时的 CIP 光氧化效率/gC 3 N 4为100%,而纯gC 3 N 4为10 %,纯MgFe 2 O 4为18% 。球形 MgFe 2 O 4纳米粒子在 gC 3 N 4表面的高度分散、高表面积、窄带隙、允许 CIP 不受阻碍地扩散到孔结构中的异质结构以及优异的电荷载流子分离能力导致增强的光催化能力。来自 MgFe 2 O 4 的磁性树脂有助于光催化剂的轻松分离并允许其回收。

更新日期:2021-09-21
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