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Cobalt selenide thin film: photovoltaic and impedance spectral studies by simple chemical grown technique
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2021-09-21 , DOI: 10.1007/s10854-021-07035-6
Muddsar L. Gaur 1 , Vijaykumar M. Bhuse 2 , Kallappa R. Sanadi 3 , Kishan C. Rathod 4 , Umesh B. Barache 5 , Shashikant H. Gaikwad 5
Affiliation  

A thin film of cobalt selenide is deposited on the fluorescence tin oxide-coated glass surface material using a simple chemical growth technique. In this article, we report on the study of photoelectrochemical characteristics (PEC), including current–voltage, capacitance–voltage characteristics, photovoltaic power output, and spectral response in dark and light conditions. For the above parameter study, we prepared using cobalt selenide and carbon electrode (using polysulfide as electrolyte), the battery configuration is expressed as n-CoSe/NaOH (1 M) + Na2S (1 M) + S (1 M)/C (graphite). The performance of the cobalt selenide thin film material the resulted values of respective series (RS) and shunt (RSh) resistance 2.280 kΩ and 1.224 Ω, respectively. The efficiency and fill factor of these PEC cells were found to be 0.899 and 28.72%. The junction ideality value are found to be (nD) is 0.69 in the dark and 2.72 in the light (nL). The M–S plots are constructed using C−2 against applied bias voltage (with respect to SCE) for CoSe PEC cell. The positive slope of the M–S plot confirms n-type conductivity of the CoSe films. The carrier density values of the samples obtained from the M–S plots varied from 3.48 × 1014 cm−3.



中文翻译:

硒化钴薄膜:通过简单的化学生长技术研究光伏和阻抗谱

硒化钴薄膜使用简单的化学生长技术沉积在荧光氧化锡涂层玻璃表面材料上。在本文中,我们报告了光电化学特性 (PEC) 的研究,包括电流-电压、电容-电压特性、光伏功率输出以及明暗条件下的光谱响应。对于上述参数研究,我们使用硒化钴和碳电极(使用多硫化物作为电解质)制备,电池配置表示为n -CoSe/NaOH (1 M) + Na 2 S (1 M) + S (1 M) /C(石墨)。硒化钴薄膜材料的性能分别为串联(R S)和并联(R Sh)的结果值) 电阻分别为 2.280 kΩ 和 1.224 Ω。发现这些 PEC 电池的效率和填充因子分别为 0.899 和 28.72%。结点理想值被发现是 ( n D ) 在黑暗中为 0.69,在光照中 ( n L ) 为2.72 。M-S 图是使用C -2对 CoSe PEC 电池施加的偏置电压(相对于 SCE)构建的。M-S 图的正斜率证实了 CoSe 薄膜的n型导电性。从 M-S 图中获得的样品的载流子密度值在 3.48 × 10 14  cm -3 之间变化

更新日期:2021-09-21
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