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Annealing temperature-dependent morphology and structure of ZnO nanoflowers for high-sensitivity ultraviolet photodetectors
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2021-09-20 , DOI: 10.1007/s10854-021-07028-5
Hao Wu 1, 2, 3 , Zhaolin Yuan 1, 2, 3 , Jianfeng He 1, 2, 3 , Xueyuan Wang 1, 2, 3 , Zhixiang Ye 3 , Fengjun Nie 4
Affiliation  

Here, using a facile hydrothermal method, the single-crystalline ZnO nanoflowers were firstly synthesized and then annealed at different temperatures from 500 to 900 °C. The results revealed that the as-synthesized samples were flower-like ZnO structures composed of many hollow nanorods; after annealing at 500 °C, hollow nanorods were changed into solid parts. Also, using the as-synthesized and annealed ZnO nanoflowers as photosensitive layers, respectively, a series of ultraviolet photodetectors were built. The results demonstrated that the ultraviolet photodetector based on the ZnO nanoflowers annealed at 800 °C had the best performance when they were exposed to 365 nm light with light intensity of 71 μW/cm2 and its sensitivity, responsivity, gain, response, and decay time were 19,991.3 at − 0.1 V, 9.7 A/W at 5 V, 33.2 at 5 V, 17.1 s, and 49.5 s, respectively. Therefore, a new avenue can be opened to construct low cost and high-sensitivity ultraviolet photodetectors by the annealed ZnO nanoflowers.



中文翻译:

用于高灵敏度紫外光电探测器的 ZnO 纳米花的退火温度依赖性形态和结构

在这里,使用简便的水热法,首先合成了单晶 ZnO 纳米花,然后在 500 至 900 °C 的不同温度下退火。结果表明,所合成的样品是由许多中空纳米棒组成的花状ZnO结构;在 500 °C 退火后,空心纳米棒变成实心部分。此外,分别使用合成和退火的 ZnO 纳米花作为光敏层,构建了一系列紫外光电探测器。结果表明,基于 800 °C 退火的 ZnO 纳米花的紫外光电探测器在 365 nm 光下具有最佳性能,光强度为 71 μW/cm 2其灵敏度、响应度、增益、响应和衰减时间分别为 - 0.1 V 时为 19,991.3,5 V 时为 9.7 A/W,5 V 时为 33.2,17.1 秒和 49.5 秒。因此,可以开辟一条新的途径,通过退火的氧化锌纳米花来构建低成本、高灵敏度的紫外光电探测器。

更新日期:2021-09-21
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