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Enhanced electric field induced strain in complex-ion Ga3+ and Ta5+-doped 0.93BNT-0.07BT piezoceramic
Journal of Electroceramics ( IF 1.7 ) Pub Date : 2021-09-21 , DOI: 10.1007/s10832-021-00264-5
Mohammad Reza Bafandeh 1 , Hyoung-Su Han 2 , Jae-Shin Lee 2
Affiliation  

The 0.93(Bi0.5Na0.5)TiO3-0.07BaTiO3 doped with different amount of (Ga0.5Ta0.5)4+ complex-ion from 0 to 4 mol% (abbreviated as BNBT-100xGT) ceramics were prepared. Phase analysis revealed that up to x = 0.035, Ga3+ and Ta5+ completely dissolve in BNBT perovskite structure and substitute in B-site. Increase in x more than 0.02 resulted in formation of pinched P-E loops accompanied by sharp decrease in Pr. This observation can be attributed to the phase transition from ferroelectric (FE) to a non-polar ergodic relaxor (ER) which could be transformed reversibly to a FE phase by applying an electric field. According to temperature-dependence dielectric constant results, transition temperature from FE to ER phase decreased and for ceramic with x = 0.03 shifted to lower than room temperature with increasing GT content. As a result, enhanced unipolar electric field-induced strain (0.4% under 60 kV/cm) corresponding to d33* of 667 pm/V was obtained in this ceramic. The large electrostrain is accompanied with relatively large hysteresis, which should be lowered for actuator applications. However (Ga0.5Ta0.5)4+ complex-ion doping of BNT-based ceramics, could be considered as an efficient approach to enhance electrical properties, especially electrostrain characteristic of these ceramics, as competitive alternatives to lead-based ceramics.



中文翻译:

复合离子 Ga3+ 和 Ta5+ 掺杂的 0.93BNT-0.07BT 压电陶瓷中增强的电场诱导应变

制备了0.93(Bi 0.5 Na 0.5 )TiO 3 -0.07BaTiO 3掺杂不同量(Ga 0.5 Ta 0.5 ) 4+配离子0~4mol%(简称BNBT-100 x GT)陶瓷。相分析表明,直至 x = 0.035,Ga 3+和 Ta 5+完全溶解在 BNBT 钙钛矿结构中并取代 B 位。x 增加超过 0.02 导致形成收缩的P - E环,伴随着P r 的急剧下降. 这一观察结果可归因于从铁电体 (FE) 到非极性遍历弛豫 (ER) 的相变,该相变可以通过施加电场可逆地转变为 FE 相。根据温度相关的介电常数结果,随着 GT 含量的增加,从 FE 到 ER 相的转变温度降低,x = 0.03 的陶瓷转变为低于室温。结果,在该陶瓷中获得了对应于667 pm/V 的d 33 *的增强的单极电场诱导应变(60 kV/cm 下为 0.4%)。大的电应变伴随着相对较大的滞后,对于执行器应用应该降低滞后。然而 (Ga 0.5 Ta 0.5 ) 4+ BNT 基陶瓷的络离子掺杂可以被认为是提高电性能的有效方法,特别是这些陶瓷的电应变特性,作为铅基陶瓷的竞争替代品。

更新日期:2021-09-21
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