High-k metal gate technology improves the performance and reduces the gate leakage current of metal–oxide–semiconductor field-effect transistors (MOSFETs). This study investigated four different work function metal (WFM) stacks in the gate of fin field-effect transistors (FinFETs) on the same substrate. These devices not only successfully produced distinct levels of threshold voltages (|V _t |) but also converted n- to p-type features merely by adding p-type WFM in the gate of the MOSFETs. All of the devices satisfied short-channel effects with shrinking channel length. The gate-to-body electric field induced drain leakage due to the nature of bulk FinFETs. However, the n- and p-type gate stacks presented different gate current leakage. For reliability, hot carrier injection (HCI) could have a higher reliability impact than the negative-bias temperature instability (NBTI) for p-MOSFET, although the stress voltage of HCI was roughly half that of the NBTI test. This multi-threshold voltage tuning allows designers to design CMOS and choose the trade-off between low power consumption and high performance on the same platform.

中文翻译：

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通过功函数金属堆栈修改 n 型和 p 型 FinFET 的阈值电压

高 k 金属栅极技术可提高金属氧化物半导体场效应晶体管 (MOSFET) 的性能并降低其栅极漏电流。本研究调查了同一衬底上鳍式场效应晶体管 (FinFET) 栅极中的四种不同功函数金属 (WFM) 堆叠。这些器件不仅成功地产生了不同水平的阈值电压 (|V _t |) 但也仅通过在 MOSFET 的栅极中添加 p 型 WFM 来将 n 型特征转换为 p 型特征。所有器件都满足短沟道效应，沟道长度缩小。由于体 FinFET 的性质，栅极到体电场会引起漏极泄漏。然而，n 型和 p 型栅极堆叠呈现不同的栅极电流泄漏。对于可靠性，热载流子注入 (HCI) 可能比 p-MOSFET 的负偏置温度不稳定性 (NBTI) 具有更高的可靠性影响，尽管 HCI 的应力电压大约是 NBTI 测试的一半。这种多阈值电压调整使设计人员能够在同一平台上设计 CMOS 并在低功耗和高性能之间进行权衡。