Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for more than a decade. Although B20–MnSi films have been successfully grown on Si(111) substrates, there is no report about B20–MnSi films on Si(100) substrates, which would be more preferred for practical applications. In this letter, we present the first preparation of B20–MnSi on Si(100) substrates. It is realized by sub-second solid-state reaction between Mn and Si via flash-lamp annealing at ambient pressure. The regrown layer shows an enhanced Curie temperature of 43 K compared with bulk B20–MnSi. The magnetic skyrmion signature is obtained in our films by magnetic and transport measurements. The millisecond-range flash-lamp annealing provides a promising avenue for the fabrication of Si-based skyrmionic devices.

磁性斯格明子已被建议作为未来自旋电子器件的信息载体。作为第一种通过实验证实斯格明子的材料，B20 型 MnSi 是十多年来的研究重点。尽管 B20-MnSi 薄膜已经成功地在 Si(111) 衬底上生长，但没有关于在 Si(100) 衬底上的 B20-MnSi 薄膜的报道，这对于实际应用来说是更优选的。在这封信中，我们介绍了在 Si(100) 衬底上首次制备 B20-MnSi。它是通过在环境压力下通过闪光灯退火在 Mn 和 Si 之间进行亚秒固态反应来实现的。与块状 B20-MnSi 相比，再生层的居里温度提高了 43 K。磁性斯格明子特征是通过磁性和传输测量在我们的薄膜中获得的。