Regulating the surface states distribution on the photoanode/electrolyte interface is crucial to photoelectrochemical (PEC) water splitting. Here we develop a CdIn₂S₄/InO_x/NiFe-LDH adaptive junction to improve the PEC performance and stability of bare CdIn₂S₄, which achieves a photocurrent density of 5.47 mA cm⁻² at 1.23 V_RHE as well as good durability under AM 1.5G illumination without sacrificial reagent. The experimental characterizations evidence that both the charge carrier density (N_d) and surface states distribution (N_ss) alter along with the interfacial structural regulation in the CdIn₂S₄/InO_x/NiFe-LDH photoanode, and a proper ratio of N_ss/N_d guarantee the optimal photocurrent. Meanwhile, a strained surface states distribution and negative shifted N_ss center facilitate the charge transfer and interfacial water oxidation kinetics as well. This work highlights the influence of interfacial structural regulation on the entangled surface states distribution and charge carrier density and may inspire more excellent work on designing other efficient photoanodes.

调节光阳极/电解质界面上的表面态分布对于光电化学（PEC）水分解至关重要。在这里，我们开发了 CdIn ₂ S ₄ /InO _x /NiFe-LDH 自适应结，以提高裸 CdIn ₂ S ₄的 PEC 性能和稳定性，在 1.23 V _{RHE 下}实现了 5.47 mA cm ^-2的光电流密度以及良好的AM 1.5G 照明下的耐久性，无需牺牲试剂。实验表征证明电荷载流子密度 ( N _d ) 和表面态分布 ( N _ss) 随着 CdIn ₂ S ₄ /InO _x /NiFe-LDH 光阳极中的界面结构调节而改变，适当的N _ss / N _d比率保证了最佳的光电流。同时，应变的表面态分布和负向移动的N _ss中心也促进了电荷转移和界面水氧化动力学。这项工作突出了界面结构调节对纠缠表面态分布和电荷载流子密度的影响，并可能激发设计其他高效光电阳极的更出色的工作。