By the process of etching and polishing, the dislocation-related etch pits were clearly created on the pyramidal faces for as-grown KDP crystals by rapid growth technique. Through a combination of 3D confocal microscope and optical microscope, the direction of dislocation lines were studied in pyramid section, and the corresponding morphologies of etch pits were also observed in detail. The results show that the dislocation lines are mainly located in the {0 1 0} faces, and the dislocation-related etch pits may be caused by screw dislocations. Moreover, the research indicates that the morphologies of dislocation-related etch pits are somewhat related to the direction of dislocation lines. For the inclined sectors of Iʹ and IIʹ on etch pits, the slope ratio of Iʹ/IIʹ decreases with the increases of β as an angle between the direction of dislocation line and the normal of {101} face. Therefore, the information of dislocation in crystal, especially the orientation of dislocation line, can be inferred by the spatial size characteristics of dislocation-related etch pits.

通过蚀刻和抛光过程，通过快速生长技术在生长的 KDP 晶体的棱锥面上明显地产生了与位错相关的蚀刻坑。通过3D共聚焦显微镜和光学显微镜的结合，研究了金字塔截面中位错线的方向，并详细观察了相应的蚀刻坑形貌。结果表明，位错线主要位于{0 1 0}面，与位错相关的刻蚀坑可能是由螺位错引起的。此外，研究表明与位错相关的蚀刻坑的形态与位错线的方向有些相关。对于蚀刻坑上Iʹ和IIʹ的倾斜部分，Iʹ/IIʹ斜率比随着位错线方向与{101}面法线夹角β的增大而减小。因此，晶体中位错的信息，尤其是位错线的方向，可以通过位错相关蚀刻坑的空间尺寸特征来推断。