We report on the optimized growth of catalyst-free GaN nanowires (NWs)/p-Si by the vapor–solid (V-S) method using chemical vapor deposition (CVD). The effect of NH₃ gas flow rate on the morphology and photovoltaic behavior of the material has been investigated. The length and the diameter of the NWs decrease as the NH₃ flow rate increases. Raman and X-ray diffraction (XRD) analyses reveal lower internal stress in the prepared NWs. The photoluminescence (PL) spectra indicate strong near band-edge (NBE) peaks extending from 365 to 368 nm and their intensity varied significantly with the NH₃ flow rate. The assembled n-GaN NWs/p-Si solar cell devices reveal a maximum conversion efficiency of ∼7.87% under AM 1.5G illumination. This study shows that the morphology, optical, and performance of the fabricated n-GaN NWs on p-Si are strongly affected by the gas flow rate.

我们报告了 使用化学气相沉积 (CVD) 通过气固 (VS) 方法优化无催化剂GaN 纳米线 (NW)/p-Si 的生长。已经研究了NH ₃气体流速对材料的形态和光伏行为的影响。NW 的长度和直径随着 NH ₃流速的增加而减小。拉曼和 X 射线衍射 (XRD) 分析显示制备的 NW 中的内应力较低。光致发光 (PL) 光谱表明强近带边 (NBE) 峰从 365 nm 延伸到 368 nm，并且它们的强度随 NH ₃流速。组装的 n-GaN NWs/p-Si 太阳能电池器件在 AM 1.5G 照明下显示出约 7.87% 的最大转换效率。该研究表明，在 p-Si 上制造的 n-GaN NW 的形态、光学和性能受气体流速的强烈影响。