The insulated gate bipolar transistor (IGBT) is one of the most fragile components in power electronics converters. In order to improve the reliability of IGBTs, various measurements are taken according to the condition monitoring (CM) technique. Traditional CM techniques include the measurement and estimation of the device operation conditions. Recently, emerging techniques have been developed, not only for the detection and estimation but also for the prognostics of IGBTs with the condition data. In this paper, a review is performed on the recent progress in the CM techniques for IGBTs. First, some emerging electrical and thermal measurements are reviewed. Based on the sensed data, the health indicator estimation techniques are summarised. Moreover, for the emerging prognostics and health management applications, some remaining using lifetime (RUL) prediction methods are reviewed. Finally, the research gaps and directions are discussed for the CM in IGBT applications.

中文翻译：

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绝缘栅双极晶体管模块状态监测的最新进展概述：检测、估计和预测

绝缘栅双极晶体管 (IGBT) 是电力电子转换器中最脆弱的元件之一。为了提高IGBT的可靠性，根据状态监测（CM）技术进行了各种测量。传统的 CM 技术包括设备运行条件的测量和估计。最近，已经开发出新兴技术，不仅用于检测和估计，还用于利用状态数据对 IGBT 进行预测。本文回顾了 IGBT 的 CM 技术的最新进展。首先，回顾了一些新兴的电气和热测量。基于感测数据，总结健康指标估计技术。此外，对于新兴的预后和健康管理应用，回顾了一些剩余的使用寿命（RUL）预测方法。最后，讨论了CM在IGBT应用中的研究差距和方向。