2D transition metal dichalcogenides (TMDs) exhibit intriguing properties for applications in optoelectronics and electronics, among which memtransistors received extensive attention as multifunctional devices. For practical applications of 2D TMDs, large-area fabrication of the materials via reliable processes, which is in trade-off with their quality, has been a long-standing issue. Here, a simple and effective way is proposed to fabricate large-area and high-quality molybdenum disulfide thin films using MoS₂ colloidal ink through a spray coating, followed by a postsulfurization process. High-quality MoS₂ thin films exhibit excellent optical and electrical properties that can be utilized in field-effect transistors (FETs) and memtransistor arrays. The MoS₂ FETs show an average on/off ratio of 5 × 10⁶ and a high electron mobility of 10.34 cm² V⁻¹ s⁻¹, which can be understood by the healing of sulfur vacancies, recrystallization, and the removal of the carbon contamination of the MoS₂. These MoS₂-based memtransistors present stable operations with a high switching ratio tuned by back gate and light illumination, which is promising for multiple-levels memory and complex neuromorphic computing. This study demonstrates a new strategy to fabricate 2D TMDs with large-area and high quality for integrated optoelectronic and memory device applications.

中文翻译：

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大面积二硫化钼通过胶体纳米片墨水用于集成忆阻器

二维过渡金属二硫属化物 (TMD) 在光电子学和电子学中的应用中表现出有趣的特性，其中记忆晶体管作为多功能器件受到广泛关注。对于二维 TMD 的实际应用，通过可靠的工艺大面积制造材料，这与其质量进行权衡，一直是一个长期存在的问题。在这里，提出了一种简单有效的方法，通过喷涂，然后进行后硫化工艺，使用 MoS ₂胶体油墨制备大面积和高质量的二硫化钼薄膜。高质量的 MoS ₂薄膜表现出优异的光学和电学特性，可用于场效应晶体管 (FET) 和记忆晶体管阵列。MoS ₂FET 显示出 5 × 10 ⁶的平均开/关比和 10.34 cm ²  V ^-1  s ^-1的高电子迁移率，这可以通过硫空位的愈合、重结晶和去除碳污染来理解MoS ₂。这些基于MoS ₂的记忆晶体管表现出稳定的操作，具有通过背栅和光照明调节的高开关比，这对于多级记忆和复杂的神经形态计算很有前景。这项研究展示了一种新策略，可以为集成光电和存储器件应用制造大面积、高质量的 2D TMD。