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A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications
Science China Information Sciences ( IF 8.8 ) Pub Date : 2021-09-10 , DOI: 10.1007/s11432-021-3224-2
Kai Zhou 1 , Guangzhong Jian 1 , Guangwei Xu 1 , Feihong Wu 1 , Yao Li 1 , Xiaolong Zhao 1 , Shibing Long 1 , Qiming He 2 , Zhuangzhuang Hu 3 , Qian Feng 3
Affiliation  

We develop a unified hybrid compact model of a different structure β-Ga2O3 SBDs for full-wave rectifier and mixer applications. The model results are compared with experimental data, and a good match was attained. Its SPICE-compatibility for circuit simulation is demonstrated in the rectifier and mixer. Considering the universality of this model, it can be practical to characterize β-Ga2O3 SBDs with other structures and further evaluate their performance in various circuits.



中文翻译:

用于混频器和整流器应用的 β-Ga2O3 肖特基势垒二极管的统一混合紧凑模型

我们为全波整流器和混频器应用开发了不同结构β -Ga 2 O 3 SBD的统一混合紧凑模型。模型结果与实验数据进行了比较,得到了很好的匹配。在整流器和混频器中展示了其对电路仿真的 SPICE 兼容性。考虑到该模型的普遍性,用其他结构表征β- Ga 2 O 3 SBD 并进一步评估它们在各种电路中的性能是可行的。

更新日期:2021-09-19
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