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Ultraviolet photodetector based on p-borophene/n-ZnO heterojunction
Nanotechnology ( IF 3.5 ) Pub Date : 2021-10-06 , DOI: 10.1088/1361-6528/ac27db
Guoan Tai 1 , Bo Liu 1 , Chuang Hou 1 , Zitong Wu 1 , Xinchao Liang 1
Affiliation  

Borophene has attracted enormous attention because of its rich and unique structural and electronic properties for promising pratical applications. Although borophene sheets have been realized on different substrates in recent experiments, there are very few reports on the device application of borophene. Recently, borophene can be grown on some functional substrates, which lays a good foundation for its potential applications. Here, we report that hydrogenated borophene can be grown on the fluorine-doped tin oxide glass substrate. The phase of the obtained borophene is well consistent with the predicted semiconducting δ 5-boron sheet. Furthermore, a vertical heterojunction ultraviolet detector based p-borophene/n-zinc oxide was fabricated. The photoresponsivity of the detector is 1.02נ10−1 A W−1, the specific detection rate was 1.43נ109 Jones and the response speed was τ res=2.8 s, τ rec=3.2 s at the reversed bias of −5 V under the light excitation of 365 nm. This work will lay a foundation for further study on the attractive properties and applications of borophene in new optoelectronic devices and integrated circuits.



中文翻译:

基于对硼烯/n-ZnO异质结的紫外光电探测器

硼烯因其丰富而独特的结构和电子特性而备受关注,具有广阔的实际应用前景。虽然最近的实验已经在不同的基板上实现了硼烯片,但关于硼烯的器件应用的报道很少。最近,硼烯可以在一些功能性基材上生长,为其潜在的应用奠定了良好的基础。在这里,我们报告了氢化硼烯可以在掺氟氧化锡玻璃基板上生长。所得硼烯的相与预测的半导体δ 5 -硼片非常一致。此外,还制造了基于 p-硼烯/n-氧化锌的垂直异质结紫外检测器。探测器的光响应度为 1.02נ10-1 AW -1,比检测率为1.43נ10 9 Jones,响应速度为τ res =2.8 s,τ rec =3.2 s,在-5 V的反向偏压下,在365 nm的光激发下。这项工作将为进一步研究硼烯在新型光电器件和集成电路中的吸引力和应用奠定基础。

更新日期:2021-10-06
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