CdSe/ZnS quantum dots (QDs) have attracted great consideration from investigators owing to their excellent photo-physical characteristics and application in quantum dot light-emitting diodes (QD-LEDs). The CdSe/ZnS-based inverted QD-LEDs structure uses high-quality semiconductors electron transport layers (ETLs), a multilayered hole transporting layers (HTLs). In QD-LED, designing a device structure with a minimum energy barrier between adjacent layers is very important to achieve high efficiency. A high mobility polymer of poly (9,9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine (TFB) was doped with 4,4′-bis-(carbazole-9-yl) biphenyl (CBP) with deep energy level to produce composite TFB:CBP holes to solve energy mismatch (HTL). In addition, we also improved the QD-LED device structure by using zinc tin oxide (ZTO) as ETL to improve device efficiency. The device turn-on voltage Vt (1 cd m⁻²⁾ with ZTO ETL reduced from 2.4 V to 1.9 V significantly. Furthermore, invert structure devices exhibit luminance of 4296 cd m⁻², current-efficiency (CE) of 7.36 cd A^−1, and external-quantum efficiency (EQE) of 3.97%. For the QD-LED based on ZTO, the device efficiency is improved by 1.7 times.

中文翻译：

---

采用非真空技术 ZTO 作为电子传输层的高稳定性倒置 CdSe/ZnS 基发光二极管

CdSe/ZnS量子点（QDs）由于其优异的光物理特性和在量子点发光二极管（QD-LEDs）中的应用而引起了研究人员的广泛关注。基于 CdSe/ZnS 的倒置 QD-LED 结构使用高质量半导体电子传输层 (ETL)、多层空穴传输层 (HTL)。在 QD-LED 中，设计相邻层之间能量势垒最小的器件结构对于实现高效率非常重要。聚（9,9-二辛基芴-co-N-（4-（3-甲基丙基））二苯胺（TFB）的高迁移率聚合物掺杂有4,4'-双-（咔唑-9-基）联苯（CBP） ) 具有深能级以产生复合 TFB:CBP 空穴以解决能量失配 (HTL)。此外，我们还通过使用氧化锌锡 (ZTO) 作为 ETL 来改进 QD-LED 器件结构，以提高器件效率。器件开启电压 Vt (1 cd m⁻²⁾使用 ZTO ETL 从 2.4 V 显着降低至 1.9 V。此外，反转结构器件的亮度为 4296 cd m ^-2，电流效率 (CE) 为 7.36 cd A ^-1，外量子效率 (EQE) 为 3.97%。对于基于ZTO的QD-LED，器件效率提高了1.7倍。