Field-effect transistors (FETs) with nanoscale channels have emerged as excellent platforms for constructing high-sensitivity biosensors. However, in typical FET-based biosensors, the electronic perturbation at channel/electrolyte interfaces results in poor stability and severe signal drifts, making long-term continuous measurements quite challenging. To address this issue, here the dielectric/semiconductor interface is tailored by depositing an ultrathin layer of Al₂O₃ (≈7 nm in thickness) on In₂O₃ FETs via solution-based processes. The results show that the Al₂O₃ dielectric layers effectively passivate the In₂O₃ channel and endow the device with low operation voltage (0.05 V), high sensitivity (61.9 mV pH⁻¹), and low current drift (0.35 mV h⁻¹) upon long-term and continuous pH monitoring. This work paves the way to real-time biosensing with high sensitivity, excellent stability, and low power consumption.

中文翻译：

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用于低漂移 pH 传感的金属氧化物场效应晶体管的界面工程

具有纳米级通道的场效应晶体管 (FET) 已成为构建高灵敏度生物传感器的绝佳平台。然而，在典型的基于 FET 的生物传感器中，通道/电解质界面处的电子扰动导致稳定性差和严重的信号漂移，使得长期连续测量非常具有挑战性。为了解决这个问题，这里的电介质/半导体界面是通过基于溶液的工艺在 In ₂ O ₃ FET 上沉积超薄的 Al ₂ O ₃层（约 7 nm 厚度）来定制的。结果表明，Al ₂ O ₃介电层有效地钝化了 In ₂ O ₃通道并赋予设备低工作电压 (0.05 V)、高灵敏度 (61.9 mV pH ^-1 ) 和低电流漂移 (0.35 mV h ^-1 ) 的长期和连续 pH 监测。这项工作为具有高灵敏度、出色稳定性和低功耗的实时生物传感铺平了道路。