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Anti-Reflection Properties of Black Silicon Coated with Thin Films of Metal Oxides by Atomic Layer Deposition
Journal of Contemporary Physics (Armenian Academy of Sciences) ( IF 0.6 ) Pub Date : 2021-09-16 , DOI: 10.3103/s1068337221030075 G. Y. Ayvazyan 1 , A. V. Aghabekyan 1 , M. V. Katkov 2, 3 , M. S. Lebedev 2 , V. R. Shayapov 2 , M. Yu. Afonin 2 , D. E. Petukhova 2 , I. V. Yushina 2 , E. A. Maksimovskii 2
中文翻译：
原子层沉积金属氧化物薄膜包覆黑硅的抗反射性能
更新日期：2021-09-17
Journal of Contemporary Physics (Armenian Academy of Sciences) ( IF 0.6 ) Pub Date : 2021-09-16 , DOI: 10.3103/s1068337221030075 G. Y. Ayvazyan 1 , A. V. Aghabekyan 1 , M. V. Katkov 2, 3 , M. S. Lebedev 2 , V. R. Shayapov 2 , M. Yu. Afonin 2 , D. E. Petukhova 2 , I. V. Yushina 2 , E. A. Maksimovskii 2
Affiliation
Abstract
The results of experimental studies of the anti-reflection properties of black silicon (b-Si) layers coated with thin films of TiO2, HfO2, and Sc2O3 metal oxides by atomic layer deposition (ALD) are presented. An improvement in the antireflection properties of b-Si in a wide spectral range is shown. It is expedient to use the investigated ALD films in solar cells as an effective passivating coating of the b-Si surface.
中文翻译：
原子层沉积金属氧化物薄膜包覆黑硅的抗反射性能
摘要
介绍了通过原子层沉积 (ALD)涂覆有 TiO 2、HfO 2和 Sc 2 O 3金属氧化物薄膜的黑硅 (b-Si) 层的抗反射特性的实验研究结果。显示了在宽光谱范围内 b-Si 抗反射性能的改进。在太阳能电池中使用研究的 ALD 薄膜作为 b-Si 表面的有效钝化涂层是有利的。
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