This paper reports a photoconductive type (Ag/Cu ₂ SnS ₃ (CTS) QDs/Ag) Vis-NIR photodetector having small channel spacing ( $\sim 63.3 \boldsymbol {\mu }\text{m}$ ) on glass substrate. The low cost solvothermal processed CTS QDs have been used as carrier transporter as well as broad light absorber. The optical parameters of the proposed structure for small illumination power density have been calculated for broad range light illumination wavelengths (650-1100 nm). The responsivity of device was found to be ~37 (mA/W) for visible (730 nm) and ~67 (mA/W) for NIR (940 nm) illumination wavelengths. The sensitivity of the device was observed to be ~2.28 and ~8.2 for 730 and 940 nm illumination wavelengths, respectively, at 5V. The time response of the device have been measured under Vis-NIR illumination and found to be ~0.96 s (rise time) and ~1.29 s (fall time).

中文翻译：

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低成本溶剂热加工 CTS QD (0D) 型可见光 NIR 光电导体

本文报道了一种 具有小通道间距的光电导型 (Ag/Cu ₂ SnS ₃ (CTS) QDs/Ag) Vis-NIR 光电探测器（ $\sim 63.3 \boldsymbol {\mu }\text{m}$ ) 在玻璃基板上。低成本的溶剂热处理 CTS QD 已被用作载流子转运体和宽光吸收体。已针对宽范围的光照射波长 (650-1100 nm) 计算了所提出的小照明功率密度结构的光学参数。发现器件的响应率对于可见光 (730 nm) 为 ~37 (mA/W)，对于 NIR (940 nm) 照明波长为 ~67 (mA/W)。在 5V 下，对于 730 和 940 nm 照明波长，观察到该器件的灵敏度分别为 ~2.28 和 ~8.2。在 Vis-NIR 照明下测量了器件的时间响应，发现为 ~0.96 s（上升时间）和 ~1.29 s（下降时间）。