In this part, design and optimization guidelines are presented for an Aluminium Gallium Nitride (AlGaN)/GaN-on-Silicon (Si) High Electron Mobility Transistor (HEMT)-based pressure sensor, for high temperature applications. The work presented here is based on the compact model developed and presented in Part I. The nature of the developed model allows not only the simulation of the sensor behavior for the case of a single HEMT sensor, but also for the case of a Wheatstone bridge configuration. Both configurations are analyzed in terms of temperature compensation, pressure sensitivity, and mechanical failure limits. Based on the presented analysis, we propose an optimized design of a temperature compensated pressure sensor for a pressure operation range between −10 bar and 10 bar, and for temperatures up to 500 °C. The optimization includes the epitaxial design, HEMT placement on the sensor membrane, membrane thickness and geometry, and the optimal biasing points for a maximum sensitivity. Strong temperature compensation can be achieved with less than 0.3 % sensitivity deviation up to 500 °C. The maximum sensitivity of 2.6 ^mV / _barV can be achieved by applying a gate voltage near the pinch-off voltage of the device or as proposed here, by recessing the barrier locally under the gate. In addition, design guidelines for other pressure ranges are given. The approach taken here can be applied to a different epitaxial design with different barrier composition and substrate using the same compact model.

中文翻译：

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用于高温应用的基于 GaN 的压力传感器的模型和仿真——第二部分：传感器设计和仿真

在本部分中，介绍了基于氮化铝镓 (AlGaN)/硅基氮化镓 (Si) 高电子迁移率晶体管 (HEMT) 的压力传感器的设计和优化指南，适用于高温应用。这里介绍的工作基于第一部分中开发和介绍的紧凑模型。开发模型的性质不仅允许模拟单个 HEMT 传感器情况下的传感器行为，还允许模拟惠斯通电桥的情况配置。两种配置都在温度补偿、压力敏感性和机械故障限制方面进行了分析。基于所呈现的分析，我们提出了温度补偿压力传感器的优化设计，适用于 -10 bar 和 10 bar 之间的压力操作范围以及高达 500 °C 的温度。优化包括外延设计、传感器膜上的 HEMT 放置、膜厚度和几何形状，以及最大灵敏度的最佳偏置点。可在高达 500 °C 的温度下以小于 0.3% 的灵敏度偏差实现强大的温度补偿。最大灵敏度 2.6^mV / _barV可以通过在器件的夹断电压附近施加栅极电压来实现，或者如这里所建议的，通过在栅极下方局部凹入势垒。此外，还给出了其他压力范围的设计指南。此处采用的方法可以应用于使用相同紧凑模型的具有不同势垒成分和衬底的不同外延设计。