We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τ_PL), and electron spin relaxation times (τ_s) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature T_g (430–600 °C) and a high V/III flux ratio using As₂. At 530 °C < T_g < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τ_PL~40 ns at RT, one order of magnitude longer than those reported so far. Long τ_s (~6 ns) is also observed at RT.

中文翻译：

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室温下晶体质量对 (110) 取向 GaAs/AlGaAs 多量子阱中载流子复合和自旋动力学的影响

我们系统地研究了(110) GaAs/AlGaAs 多量子阱 (MQW) 中的结构特性、载流子寿命，即光致发光 (PL) 寿命 ( τ _PL ) 和电子自旋弛豫时间 ( τ _s )。 PL 测量。MQWs 是通过分子束外延在很宽的生长温度T _g (430–600 °C) 和使用 As ₂的高 V/III 通量比生长的。在 530 °C < T _g < 580 °C 时，我们发现异质界面的质量显着提高，导致RT 的τ _PL ~40 ns，比迄今为止报道的要长一个数量级。长τ在 RT 处也观察到_s (~6 ns)。